High-Efficiency Deep-Ultraviolet Light-Emitting Diodes With Efficient Carrier Confinement and High Light Extraction

被引：26

作者：

Chang, Jih-Yuan ^{[1
]}

Liou, Bo-Ting ^{[2
]}

Huang, Man-Fang ^{[3
]}

Shih, Ya-Hsuan ^{[4
]}

Chen, Fang-Ming ^{[3
]}

Kuo, Yen-Kuang ^{[5
]}

机构：

[1] Changhua Univ Educ, Ctr Teacher Educ Natl, Changhua 500, Taiwan

[2] Hsiuping Univ Sci & Technol, Dept Mech Engn, Taichung 412, Taiwan

[3] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

[4] Natl Cheng Kung Univ, Dept Photon, Tainan 701, Taiwan

[5] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 02期

关键词：

AlGaN; carrier confinement; light-emitting diodes (LEDs); light extraction; polarization effect; BAND-STRUCTURE; POLARIZATION;

D O I：

10.1109/TED.2018.2887074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In deep-ultraviolet (DUV) light-emitting diodes (LEDs), it is difficult to obtain both efficient carrier confinement and high light extraction, which are quite sensitive to optical polarization and other physical parameters. In this paper, characteristics of DUV LEDs with various n-AlGaN layers and quantum barriers (QBs), and various widths of quantum wells (QWs) are investigated. Specifically, the capability of carrier confinement and properties of optical polarization are analyzed in detail. The simulation results show that LED structure with Al0.64Ga0.36N QBs, n-Al0.7Ga0.3N layer, and 4-nm-thick QWs, which has a peak emission wavelength of 284.5 nm at 60 mA, exhibits high internal quantum efficiency of 25% and high degree of optical polarization of 0.874.

引用

页码：976 / 982

页数：7

共 27 条

[1] Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells [J].

Al Tahtamouni, T. M. ;

Lin, J. Y. ;

Jiang, H. X. .

APPLIED PHYSICS LETTERS, 2012, 101 (04)

[2] High optical quality AlInGaN by metalorganic chemical vapor deposition [J].

Aumer, ME ;

LeBoeuf, SF ;

McIntosh, FG ;

Bedair, SM .

APPLIED PHYSICS LETTERS, 1999, 75 (21) :3315-3317

[3] Optical anisotropy in [0001]-oriented AlxGa1-xN/AlN quantum wells (x>0.69) [J].

Banal, R. G. ;

Funato, M. ;

Kawakami, Y. .

PHYSICAL REVIEW B, 2009, 79 (12)

[4] Spontaneous polarization and piezoelectric constants of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027

[5] Effects of quantum barriers and electron-blocking layer in deep-ultraviolet light-emitting diodes [J].

Chang, Jih-Yuan ;

Huang, Man-Fang ;

Chen, Fang-Ming ;

Liou, Bo-Ting ;

Shih, Ya-Hsuan ;

Kuo, Yen-Kuang .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (07)

[6] Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes With Composition-Graded Configuration [J].

Chang, Jih-Yuan ;

Chang, Hui-Tzu ;

Shih, Ya-Hsuan ;

Chen, Fang-Ming ;

Huang, Man-Fang ;

Kuo, Yen-Kuang .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (12) :4980-4984

[7] Electrical Polarization Effects on the Optical Polarization Properties of AlGaN Ultraviolet Light-Emitting Diodes [J].

Chang, Yi-An ;

Chen, Fang-Ming ;

Li, Shan-Rong ;

Kuo, Yen-Kuang .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (09) :3233-3238

[8] k center dot p method for strained wurtzite semiconductors [J].

Chuang, SL ;

Chang, CS .

PHYSICAL REVIEW B, 1996, 54 (04) :2491-2504

[9] A band-structure model of strained quantum-well wurtzite semiconductors [J].

Chuang, SL ;

Chang, CS .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (03) :252-263

[10]

Crosslight Software, 2015, APSYS

← 1 2 3 →