Structural and Electrical Characteristics of High-κ Sm2TiO5 Gate Dielectrics for InGaZnO Thin-film Transistors

被引：5

作者：

Chen, Fa-Hsyang ^{[1
]}

Chen, Ching-Hung ^{[1
]}

Pan, Tung-Ming ^{[1
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan

来源：

IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION | 2015年 / 22卷 / 03期

关键词：

amorphous indium-gallium-zinc oxide (alpha-IGZO); gate dielectric; Sm2TiO5; thin-film transistor (TFT); PERFORMANCE; PR2O3; SM2O3;

D O I：

10.1109/TDEI.2015.7116319

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, we developed an amorphous indium-gallium-zinc oxide (alpha-IGZO) thin-film transistor (TFT) incorporating high-kappa Sm2TiO5 gate dielectrics. The high-kappa Sm2TiO5 alpha-IGZO TFT after annealing at 400 degrees C exhibited very good electrical characteristics, such as a high I-on/off ratio of 5.27x10(7), a high field-effect mobility of 27.8cm(2)/V-sec, a low threshold voltage of 0.2 V, and a low subthreshold swing of 136 mV/decade. These results are probably due to the incorporation of Ti into the Sm2O3 film, resulting in the formation of good Sm2TiO5 gate dielectric and low density of interface states at the oxide/channel interface.

引用

页码：1337 / 1342

页数：6

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