Structural and Electrical Characteristics of High-κ Sm2TiO5 Gate Dielectrics for InGaZnO Thin-film Transistors

被引：5
|
作者：
Chen, Fa-Hsyang [1 ]
Chen, Ching-Hung [1 ]
Pan, Tung-Ming [1 ]
机构：
[1] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan
来源：
IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION | 2015年 / 22卷 / 03期
关键词：
amorphous indium-gallium-zinc oxide (alpha-IGZO); gate dielectric; Sm2TiO5; thin-film transistor (TFT); PERFORMANCE; PR2O3; SM2O3;
D O I：
10.1109/TDEI.2015.7116319
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we developed an amorphous indium-gallium-zinc oxide (alpha-IGZO) thin-film transistor (TFT) incorporating high-kappa Sm2TiO5 gate dielectrics. The high-kappa Sm2TiO5 alpha-IGZO TFT after annealing at 400 degrees C exhibited very good electrical characteristics, such as a high I-on/off ratio of 5.27x10(7), a high field-effect mobility of 27.8cm(2)/V-sec, a low threshold voltage of 0.2 V, and a low subthreshold swing of 136 mV/decade. These results are probably due to the incorporation of Ti into the Sm2O3 film, resulting in the formation of good Sm2TiO5 gate dielectric and low density of interface states at the oxide/channel interface.
引用
收藏
页码：1337 / 1342
页数：6
相关论文
共 50 条
  • [1] Structural and electrical characteristics of high-κ ErTixOy gate dielectrics on InGaZnO thin-film transistors
    Chen, Fa-Hsyang
    Her, Jim-Long
    Shao, Yu-Hsuan
    Li, Wei-Chen
    Matsuda, Yasuhiro H.
    Pan, Tung-Ming
    THIN SOLID FILMS, 2013, 539 : 251 - 255
  • [2] Structural Properties and Electrical Characteristics of high-κ GdTiO3 Gate Dielectrics for InGaZnO Thin-Film Transistors
    Chen, Ching-Hung
    Her, Jim-Long
    Pan, Tung-Ming
    Chiu, Fu-Chien
    Koyama, Keiichi
    2014 TENTH INTERNATIONAL VACUUM ELECTRON SOURCES CONFERENCE (IVESC), 2014,
  • [3] Structural and Electrical Characteristics of High-k Sm2TiO5 Gate Dielectrics
    Pan, Tung-Ming
    Yen, Li-Chen
    Huang, Chun-Chin
    Lin, Wu-Ching
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (06) : G27 - G29
  • [4] Influence of Annealing Temperature on Structural and Electrical Characteristics of High-κ Yb2O3 Gate Dielectrics for InGaZnO Thin-Film Transistors
    Pan, Tung-Ming
    Chen, Fa-Hsyang
    Hung, Meng-Ning
    SCIENCE OF ADVANCED MATERIALS, 2015, 7 (06) : 1108 - 1113
  • [5] Structural Properties and Electrical Characteristics of High-κ Tm2O3 Gate Dielectrics for InGaZnO Thin Film Transistors
    Pan, Tung-Ming
    Chen, Fa-Hsyang
    Hung, Meng-Ning
    Her, Jim-Long
    Koyama, Keiichi
    SCIENCE OF ADVANCED MATERIALS, 2014, 6 (09) : 1973 - 1978
  • [6] Effect of surface roughness on electrical characteristics in amorphous InGaZnO thin-film transistors with high-κ Sm2O3 dielectrics
    Chen, Fa-Hsyang
    Hung, Meng-Ning
    Yang, Jui-Fu
    Kuo, Shou-Yi
    Her, Jim-Long
    Matsuda, Yasuhiro H.
    Pan, Tung-Ming
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2013, 74 (04) : 570 - 574
  • [7] Structural and Electrical Characteristics of Yb2O3 and YbTixOy Gate Dielectrics for α-InGaZnO Thin-Film Transistors
    Pan, Tung-Ming
    Chen, Ching-Hung
    Chen, Fa-Hsyang
    Huang, Yu-Shu
    Her, Jim-Long
    JOURNAL OF DISPLAY TECHNOLOGY, 2015, 11 (03): : 248 - 254
  • [8] Effect of annealing temperature on structural and electrical properties of high-κ YbTixOy gate dielectrics for InGaZnO thin film transistors
    Pan, Tung-Ming
    Chen, Fa-Hsyang
    Hung, Meng-Ning
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (01)
  • [9] Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors
    Chen, Fa-Hsyang
    Her, Jim-Long
    Shao, Yu-Hsuan
    Matsuda, Yasuhiro H.
    Pan, Tung-Ming
    NANOSCALE RESEARCH LETTERS, 2013, 8 : 1 - 5
  • [10] Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors
    Fa-Hsyang Chen
    Jim-Long Her
    Yu-Hsuan Shao
    Yasuhiro H Matsuda
    Tung-Ming Pan
    Nanoscale Research Letters, 8
12345