Fabrication and characteristics of a surface acoustic wave UV sensor based on ZnO thin films grown on a polycrystalline 3C-SiC buffer layer

被引：25

作者：

Phan, Duy-Thach ^{[1
]}

Chung, Gwiy-Sang ^{[1
]}

机构：

[1] Univ Ulsan, Sch Elect Engn, Ulsan 680749, South Korea

来源：

CURRENT APPLIED PHYSICS | 2012年 / 12卷 / 02期

关键词：

SAW UV sensor; ZnO film; 3C-SiC buffer layer; OPTICAL-PROPERTIES; SIC BUFFER; SI(111) SUBSTRATE; MULTILAYERS; DEVICE;

D O I：

10.1016/j.cap.2011.08.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zinc oxide (ZnO) thin films were deposited onto a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) ultraviolet (UV) sensing using a magnetron sputtering system. X-ray diffraction (XRD) and photoluminescence (PL) spectra showed that the ZnO film grown on 3C-SiC/Si had a dominant c-axis orientation, a lower residual stress, and higher intensity of luminescence at 380 nm of ZnO thin film. The SAW resonator UV detector were fabricated on ZnO/Si structures with a 3C-SiC buffer layer. The SAW resonator exposed under UV illumination had a linear response with sensitivity of 85 Hz/(mu W/cm(2)) in ZnO/3C-SiC/Si structures, as compared to 25 Hz/(mu W/cm(2)) in ZnO/Si structures with UV intensity varied until 600 mu W/cm(2). (C) 2011 Elsevier B. V. All rights reserved.

引用

页码：521 / 524

页数：4