Peculiarities of photoluminescence of vertical n +/n-GaAs/Al0.25Ga0.75As MBE- and MOCVD-grown structures designed for microwave detectors

被引:0
作者
Cerskus, Aurimas [1 ,2 ]
Kundrotas, Jurgis [1 ]
Suziedelis, Algirdas [1 ,2 ]
Gradauskas, Jonas [1 ,2 ]
Asmontas, Steponas [1 ]
Johannessen, Eric [3 ]
Johannessen, Agne [3 ]
机构
[1] Ctr Phys Sci & Technol, Semicond Phys Inst, LT-01108 Vilnius, Lithuania
[2] Vilnius Gediminas Tech Univ, LT-10223 Vilnius, Lithuania
[3] Buskerud & Vestfold Univ Coll, N-3184 Borre, Norway
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2015年 / 120卷 / 03期
关键词
QUANTUM-WELLS; TERAHERTZ DETECTORS; GAAS; ALXGA1-XAS; STATES; SI; DEPENDENCE; ARSENIDE; CARRIERS; CAPTURE;
D O I
10.1007/s00339-015-9292-z
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Vertical MBE- and MOCVD-grown structures used for microwave electronics have been studied with continuous wave and time-correlated single photon counting dynamic photoluminescence technique. The photoluminescence spectra and light emission lifetimes are used to explain the recombination mechanisms of the excited carriers. This paper presents results showing the differences in recombination characteristics of layers grown using MBE process compared with MOCVD process. One of these differences is that the PL spectrum of the MOCVD-grown layer is shifted towards the forbidden energy gap region, as well as the characteristic recombination time is longer than for the MBE-grown sample. This peculiarity can be attributed to the formation of the localised band tails in the MOCVD-grown sample. The proposed analytical model explains the differences in microwave detection properties of the samples grown by MBE and MOCVD processes.
引用
收藏
页码:1133 / 1140
页数:8
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