Nanocrystal floating gate memory with solution-processed indium-zinc-tin-oxide channel and colloidal silver nanocrystals

被引：10

作者：

Hu, Quanli ^{[2
]}

Ha, Sang-Hyub ^{[1
]}

Lee, Hyun Ho ^{[1
]}

Yoon, Tae-Sik ^{[2
,3
]}

机构：

[1] Myongji Univ, Dept Chem Engn, Yongin 449728, Gyeonggi Do, South Korea

[2] Myongji Univ, Dept Nano Sci & Engn, Yongin 449728, Gyeonggi Do, South Korea

[3] Myongji Univ, Dept Mat Sci & Engn, Yongin 449728, Gyeonggi Do, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

SEMICONDUCTORS; NANOPARTICLES; TEMPERATURE; SINGLE; LAYER; TFTS;

D O I：

10.1088/0268-1242/26/12/125021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A nanocrystal (NC) floating gate memory with solution-processed indium-zinc-tin-oxide (IZTO) channel and silver (Ag) NCs embedded in thin gate dielectric layer (SiO2(30 nm)/Al2O3(3 nm)) was fabricated. Both the IZTO channel and colloidal Ag NC layers were prepared by spin-coating and subsequent annealing, and dip-coating process, respectively. A threshold voltage shift up to similar to 0.9 V, corresponding to the electron density of 6.5 x 10(11) cm(-2), at gate pulsing <= 10 V was achieved by the charging of high density NCs. These results present the successful non-volatile memory characteristics of an oxide-semiconductor transistor fabricated through solution processes.

引用

页数：5

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