Progress in electrodeposited absorber layer for CuIn(1-x)GaxSe2 (CIGS) solar cells

被引：125

作者：

Saji, Viswanathan S. ^{[1
]}

Choi, Ik-Ho ^{[1
]}

Lee, Chi-Woo ^{[1
]}

机构：

[1] Korea Univ, Dept Adv Mat Chem, Chungnam 339700, South Korea

来源：

SOLAR ENERGY | 2011年 / 85卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

Electrodeposition; Absorber layer; Cu(In((1-x))Ga-x)Se-2 (CIGS) solar cell; CUIN1-XGAXSE2-BASED PHOTOVOLTAIC CELLS; THIN-FILMS; OPTICAL-PROPERTIES; RECOMBINATION MECHANISMS; NANOWIRE ARRAYS; CU(IN; GA)SE-2; CUINSE2; EFFICIENCY; INDIUM; GROWTH;

D O I：

10.1016/j.solener.2011.08.003

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Thin film solar cells with chalcopyrite CuInSe2/Cu(lnGa)Se-2 (CIS/CIGS) absorber layers have attracted significant research interest as an important light-to-electricity converter with widespread commercialization prospects. When compared to the ternary CIS, the quaternary CIGS has more desirable optical band gap and has been found to be the most efficient among all the CIS-based derivatives. Amid various fabrication methods available for the absorber layer, electrodeposition may be the most effective alternative to the expensive vacuum based techniques. This paper reviewed the developments in the area of electrodeposition for the fabrication of the CIGS absorber layer. The difficulties in incorporating the optimum amount of Ga in the film and the likely mechanism behind the deposition were highlighted. The role of deposition parameters was discussed along with the phase and microstructure variation of an as-electrodeposited CIGS layer from a typical acid bath. Related novel strategies such as individual In, Ga and their binary alloy deposition for applications in CIGS solar cells were briefed. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：2666 / 2678

页数：13

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