Yb3+:YAG growth with controlled doping distribution using modified horizontal direct crystallization

被引:15
|
作者
Azrakantsyan, M. [1 ,2 ]
Albach, D. [1 ,3 ]
Ananyan, N. [4 ]
Gevorgyan, V. [2 ]
Chanteloup, J-C. [1 ]
机构
[1] Ecole Polytech, CNRS, CEA, LULI,UPMC, F-91128 Palaiseau, France
[2] Russian Armenian Slavon Univ, Yerevan 0051, Armenia
[3] Inst Franco Allemand Rech St Louis, F-68300 St Louis, France
[4] Laserayin Tekhnika CSC, Yerevan 0090, Armenia
关键词
Growth from melt; Oxides; Dielectric materials; Solid state lasers;
D O I
10.1016/j.jcrysgro.2011.03.060
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Experimental demonstration of the first controlled gradient doped ytterbium YAG crystal boules grown via modified Horizontal Direct Crystallization technique is presented. Yb(3+):YAG crystals extracted from these boules exhibit a controlled continuous doping gradient, offering opportunities to explore laser concepts with greatly improved characteristics such as thermal and amplified spontaneous emission management; but also in terms of gain medium volume requirements. The growth process with its specificities compared to known growth techniques used for homogeneously doped crystal growth, is described in detail. The Yb(3+) ions distribution within the extracted crystals is quantified. Optical transmission and fluorescence measurements will also be presented. (C) 2011 Published by Elsevier B.V.
引用
收藏
页码:39 / 43
页数:5
相关论文
empty
未找到相关数据