Charge transfer between Si4+ ion and helium at electron-volt energies

被引：11

作者：

Fang, Z ^{[1
]}

Kwong, VHS ^{[1
]}

机构：

[1] Univ Nevada, Dept Phys, Las Vegas, NV 89154 USA

来源：

PHYSICAL REVIEW A | 1999年 / 59卷 / 01期

关键词：

D O I：

10.1103/PhysRevA.59.342

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The charge-transfer rate coefficient for the reaction Si4++He-->products was measured at an equivalent temperature of 4.6x10(3) K using a laser-induced plasma ion source and ion storage. The rate coefficient is 4.54(0.48)x 10(-12) cm(3) s(-1) and is at least an order of magnitude smaller than the available theoretical values. [S1050-2947(99)03401-0].

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页码：342 / 345

页数：4

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