High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots

被引：57

作者：

Mexis, M. ^{[1
]}

Sergent, S. ^{[2
,3
]}

Guillet, T. ^{[1
]}

Brimont, C. ^{[1
]}

Bretagnon, T. ^{[1
]}

Gil, B. ^{[1
]}

Semond, F. ^{[2
]}

Leroux, M. ^{[2
]}

Neel, D. ^{[4
]}

David, S. ^{[4
]}

Checoury, X. ^{[4
]}

Boucaud, P. ^{[4
]}

机构：

[1] Univ Montpellier 2, CNRS, UM2, Lab Charles Coulomb,UMR5221, F-34095 Montpellier, France

[2] CNRS, Ctr Rech Heteroepitaxie & Ses Applicat, F-06560 Valbonne, France

[3] Univ Nice Sophia Antipolis, F-06102 Nice, France

[4] Univ Paris 11, CNRS, Inst Elect Fondamentale, F-91405 Orsay, France

来源：

OPTICS LETTERS | 2011年 / 36卷 / 12期

关键词：

LASERS; BOXES;

D O I：

10.1364/OL.36.002203

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We compare the quality factor values of the whispering gallery modes of microdisks (mu-disks) incorporating GaN quantum dots (QDs) grown on AlN and AlGaN barriers by performing room temperature photoluminescence (PL) spectroscopy. The PL measurements show a large number of high Q factor resonant modes on the whole spectrum, which allows us to identify the different radial mode families and to compare them with simulations. We report a considerable improvement of the Q factor, which reflects the etching quality and the relatively low cavity loss by inserting QDs into the cavity. GaN/AlN QDs-based mu-disks show very high Q values (Q > 7000) whereas the Q factor is only up to 2000 in mu-disks embedding QDs grown on the AlGaN barrier layer. We attribute this difference to the lower absorption below bandgap for AlN barrier layers at the energies of our experimental investigation. (C) 2011 Optical Society of America

引用

页码：2203 / 2205

页数：3

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