Self-consistent calculation of current self-distribution effect in GaAs-AlGaAs oxide-confined VCSELs

被引：19
作者：
Osinski, M [1 ]
Smagley, VA
Lu, M
Smolyakov, GA
Eliseev, PG
Riely, BP
Shen, PH
Simonis, GJ
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow, Russia
[3] USA, Res Lab, Adelphi, MD 20783 USA
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2003年 / 9卷 / 05期
关键词：
semiconductor device modeling; semiconductor lasers; vertical cavity surface-emitting laser (VCSEL);
D O I：
10.1109/JSTQE.2003.819507
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A three-dimensional electrical-thermal-optical numerical solver is applied to model GaAs-AlGaAs-based top-emitting oxide-confined vertical-cavity surface-emitting lasers (VCSELs) with GaAs multiple-quantum-well active region. Continuous-wave mode of operation is simulated over a range of voltages, covering the subthreshold spontaneous emission and lasing emission. The effect of self-distribution of electrical current is demonstrated for the first time in self-consistent electrical-thermal-optical simulation of VCSELs.
引用
收藏
页码：1422 / 1430
页数：9
相关论文
共 25 条
  • [1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
    ADACHI, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29
  • [2] ADACHI S, 1994, BULK SEMICONDUCTING, P30
  • [3] Comparison of optical VCSEL models on the simulation of oxide-confined devices
    Bienstman, P
    Baets, R
    Vukusic, J
    Larsson, A
    Noble, MJ
    Brunner, M
    Gulden, K
    Debernardi, P
    Fratta, L
    Bava, GP
    Wenzel, H
    Klein, B
    Conradi, O
    Pregla, R
    Riyopoulos, SA
    Seurin, JPP
    Chuang, SL
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (12) : 1618 - 1631
  • [4] Thermal conductivity of κ-Al2O3 and α-Al2O3 wear-resistant coatings
    Cahill, DG
    Lee, SM
    Selinder, TI
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 5783 - 5786
  • [5] Casey Jr H. C., 1978, HETEROSTRUCTURE LASE
  • [6] A MODEL FOR GRIN-SCH-SQW DIODE-LASERS
    CHINN, SR
    ZORY, PS
    REISINGER, AR
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (11) : 2191 - 2214
  • [7] Comprehensive modeling of vertical-cavity laser-diodes by the method of lines
    Conradi, O
    Helfert, S
    Pregla, R
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (07) : 928 - 935
  • [8] A comprehensive model for the modal dynamics of vertical-cavity surface-emitting lasers
    Gustavsson, JS
    Vukusic, JA
    Bengtsson, J
    Larsson, A
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (02) : 203 - 212
  • [9] Comprehensive numerical modeling of vertical-cavity surface-emitting lasers
    Hadley, GR
    Lear, KL
    Warren, ME
    Choquette, KD
    Scott, JW
    Corzine, SW
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (04) : 607 - 616
  • [10] Improved theory for carrier leakage and diffusion in multiquantum-well semiconductor lasers
    Irikawa, M
    Ishikawa, T
    Fukushima, T
    Shimizu, H
    Kasukawa, A
    Iga, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (4A): : 1730 - 1737
123