Performance evaluation of field-enhanced p-channel split-gate flash memory

被引：2

作者：

Chu, WT ^{[1
]}

Lin, HH

Wang, YH

Hsieh, CT

Lin, YT

Wang, CS

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10764, Taiwan

[3] Taiwan Mfg Co Ltd, Non Volatile Memory Div, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 09期

关键词：

field-enhanced structure; flash memory; p-channel; split-gate;

D O I：

10.1109/LED.2005.853633

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A p-channel split-gate Flash memory cell, employing a field-enhanced structure, is investigated in this letter. A cell with a sharp poly-tip structure is utilized to enhance the electric field, while using Fowler-Nordheim tunneling through the interpoly oxide. The cell demonstrated an erase voltage as low as 12 V. In cell programming, both channel-hot-hole impact ionization induced channel-hot-electrons (CHE) and hand-to-hand tunneling induced hot electrons (BBHE) are evaluated. BBHE shows an injection efficiency of similar to 2 orders in magnitude higher than that of CHE. The cell also demonstrated an acceptable program disturb window, which is of high concern in a p-channel stacked-gate cell. Both programming approaches can pass 300 k program/erase cycles.

引用

页码：670 / 672

页数：3