Isotopic Disorder: The Prevailing Mechanism in Limiting the Phonon Lifetime in Hexagonal BN

被引:30
作者
Cusco, Ramon [1 ]
Edgar, James H. [2 ]
Liu, Song [2 ]
Li, Jiahan [2 ]
Artus, Luis [1 ]
机构
[1] CSIC, Inst Jaume Almera ICTJA, Lluis Sole i Sabaris Sn, E-08028 Barcelona, Spain
[2] Kansas State Univ, Tim Taylor Dept Chem Engn, Manhattan, KS 66506 USA
基金
美国国家科学基金会;
关键词
RAMAN-SPECTRA; CRYSTALS;
D O I
10.1103/PhysRevLett.124.167402
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The phonon linewidth of isotopically controlled hexagonal boron nitride (h-BN) single crystals has been determined by Raman scattering. The scattering by isotopic mass disorder induces a phonon broadening that is largest for boron 11 fractions around 0.65. Lowest-order perturbation theory does not suffice to explain the dependence of the isotopic broadening on isotopic composition. A multiple-scattering theory based on the coherent potential approximation provides a good quantitative account of the phonon shift and broadening with isotopic composition observed in the experiments. Isotopic-disorder scattering is shown to have a prominent role in limiting the optical-phonon lifetime in h-BN
引用
收藏
页数:6
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