Influence of interface dipoles on the UV/Solar rejection ratios of GaN/AlGaN/GaN photodetectors

被引：2
|
作者：
Zhang, CF [1 ]
Yue, H
You, HL
Zhang, JF
Zhou, XW
机构：
[1] Xidian Univ, Inst Microelect, Key Lab Wide Band Gap Semicond Mat, Xian 710071, Peoples R China
[2] Xidian Univ, Inst Microelect, Devices Minist Educ, Xian 710071, Peoples R China
来源：
ACTA PHYSICA SINICA | 2005年 / 54卷 / 08期
关键词：
UV/Solar rejection ratios; solar-blind photodetector; polarization; dipole;
D O I：
10.7498/aps.54.3810
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In the inverted heterostructure photodiodes (IHPs) the strong polarization effect at the interface of the AlGaN/GaN heterostructure influences UV/Solar rejection ratios of this type of structure. In this paper, the total effect of polarization is divided into two parts: the polarization and dipole terms. Based on the model of GaN/AlGaN/GaN IHPs, the influence of dipoles on the UV/Solar rejection ratios is analyzed. The results show that when dipoles are considered, UV/Solar rejection ratios of photodetectors are about three orders of magnitude, which agree with the experiment of Tarsa. The influence of dipoles should be considered in the IHPs.
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页码：3810 / 3814
页数：5
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