Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe2

被引：181

作者：

Xi, Xiaoxiang ^{[1
,2
]}

Berger, Helmuth ^{[3
]}

Forro, Laszlo ^{[3
]}

Shan, Jie ^{[1
,2
]}

Mak, Kin Fai ^{[1
,2
]}

机构：

[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[2] Penn State Univ, Ctr Dimens & Layered Mat 2, University Pk, PA 16802 USA

[3] Ecole Polytech Fed Lausanne, Inst Condensed Matter Phys, CH-1015 Lausanne, Switzerland

来源：

PHYSICAL REVIEW LETTERS | 2016年 / 117卷 / 10期

基金：

美国国家科学基金会; 瑞士国家科学基金会;

关键词：

CHARGE-DENSITY WAVES; INDUCED SUPERCONDUCTIVITY; CONDUCTIVITY; TEMPERATURE; CRYSTALS; 2H-NBSE2; METAL;

D O I：

10.1103/PhysRevLett.117.106801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the monolayer limit. The atomic thickness of two-dimensional (2D) TMD metals also opens up the possibility for control of these electronic phase transitions by electrostatic gating. Here, we demonstrate reversible tuning of superconductivity and CDW order in model 2D TMD metal NbSe2 by an ionic liquid gate. A variation up to similar to 50% in the superconducting transition temperature has been observed. Both superconductivity and CDW order can be strengthened (weakened) by increasing (reducing) the carrier density in 2D NbSe2. The doping dependence of these phase transitions can be understood as driven by a varying electron-phonon coupling strength induced by the gate-modulated carrier density and the electronic density of states near the Fermi surface.

引用

页数：6

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