Highly packed InGaAs quantum dots on GaAs(311)B

被引：75
作者：
Akahane, K
Kawamura, T
Okino, K
Koyama, H
Lan, S
Okada, Y
Kawabe, M
Tosa, M
机构：
[1] Univ Tsukuba, Inst Mat Sci, Ibaraki 3058573, Japan
[2] Natl Res Inst Met, Ibaraki 3050047, Japan
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 23期
关键词：
D O I：
10.1063/1.122781
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated highly packed and ordered In0.4Ga0.6As quantum dots (QDs) array on GaAs(311)B substrate without coalescence of QDs. Reflection high-energy electron diffraction and Auger spectra suggest the inhomogeneous distribution of In and Ga in QD. In concentration near the surface of QD is larger than that of the inside, and the inhomogeneous distribution of In and Ga in QDs prevents QDs from merging. (C) 1998 American Institute of Physics. [S0003-6951(98)01349-7].
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页码：3411 / 3413
页数：3
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