Tunneling spectroscopy in Fe-GaN-Fe trilayer structures grown by MBE using ECR microwave plasma nitrogen source

被引：3

作者：

Németh, S

Boeve, H

Liu, ZY

Attenborough, K

Bender, H

Nistor, L

Borghs, G

De Boeck, J

机构：

[1] IMEC VZW, MAP, CSE, B-3001 Louvain, Belgium

[2] Univ Antwerp, RUCA, B-2020 Antwerp, Belgium

[3] Natl Inst Mat Phys, Bucharest 76900, Romania

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

tunneling magnetoresistance; metal-semiconductor-metal; ECR-MBE; GaN;

D O I：

10.1016/S0022-0248(01)00923-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxy of Fe on GaAs by the MBE technique has a long tradition in magnetism research. This paper deals with the growth of epitaxial Fe-GaN-Fe trilayer structures whose intriguing magnetic properties were exploited for the evaluation of GaN as a spin-dependent tunneling barrier. The trilayers were grown on semi-insulating (0 0 1) GaAs using an ultra-high vacuum deposition chamber equipped with electron cyclotron resonance (ECR) microwave plasma nitrogen source. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：888 / 892

页数：5