The effects of hydrogen dilution on structure of Si:H thin films deposited by PECVD

被引：11

作者：

Tran Quang Trung ^{[1
]}

Jiri, Stuchlik ^{[2
]}

Stuchlikova, Ha ^{[2
]}

Le Khac Binh ^{[1
]}

Nguyen Nang Dinh

Huynh Kim Khuong ^{[1
]}

Phan Thi Nhu Quynh ^{[1
]}

Nguyen Thi Huynh Nga ^{[1
]}

机构：

[1] Univ Nat Sci HCM, 227 Nguyen Van Cu Str,5 Distr, Ho Chi Minh City, Vietnam

[2] Inst Phys, CZ-18221 Prague, Czech Republic

来源：

APCTP-ASEAN WORKSHOP ON ADVANCED MATERIALS SCIENCE AND NANOTECHNOLOGY (AMSN08) | 2009年 / 187卷

关键词：

Plasma-enhanced chemical vapor deposition; hydrogen dilution; a-Si:H; nc/mu c-Si:H; para-crystallines; AMORPHOUS-SILICON; RAMAN;

D O I：

10.1088/1742-6596/187/1/012035

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Si:H thin films were deposited using PECVD method at substrate temperature of 250 degrees C with different hydrogen dilution. Structure investigations and hydrogen concentration estimation were performed using FTIR, Raman and UV-VIS spectroscopy. The IR and Raman spectra show various peak shifting when H dilution is changed. Band gaps of films were evaluated from the strong absorption regions in UV-VIS transmission spectra. The results demonstrate a transition from amorphous to nc/mu c structure when hydrogen dilution increased.

引用

页数：6

共 11 条

[1]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[2]

DASDEBAJYOTI, 1997, B MATER SCI, V20, P9

[3]

DYLLA T, 2004, THESIS U BERLIN

[4] Effect of oxygen contamination on the properties of the silicon hydrogen alloy materials deposited under conditions near the microcrystalline silicon formation region [J].

Gupta, ND ;

Chaudhuri, P .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2001, 289 (1-3) :168-174

[5] Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution [J].

Kroll, U ;

Meier, J ;

Shah, A ;

Mikhailov, S ;

Weber, J .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (09) :4971-4975

[6]

LUCOVSKY G, 1984, PHYS HYDROGENATED SI, V2

[7] Structural changes in a-Si:H film crystallinity with high H dilution [J].

Mahan, AH ;

Yang, J ;

Guha, S ;

Williamson, DL .

PHYSICAL REVIEW B, 2000, 61 (03) :1677-1680

[8] Raman, photoluminescence and optical absorption studies on nanocrystalline silicon [J].

Mishra, P ;

Jain, KP .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 95 (03) :202-213

[9]

Tolstoy V.P., 2003, HDB INFRARED SPECTRO

[10]

TRUNG TQ, 2008, P 1 IWNA 2008 VIETN

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