The effects of hydrogen dilution on structure of Si:H thin films deposited by PECVD

被引：11

作者：

Tran Quang Trung ^{[1
]}

Jiri, Stuchlik ^{[2
]}

Stuchlikova, Ha ^{[2
]}

Le Khac Binh ^{[1
]}

Nguyen Nang Dinh

Huynh Kim Khuong ^{[1
]}

Phan Thi Nhu Quynh ^{[1
]}

Nguyen Thi Huynh Nga ^{[1
]}

机构：

[1] Univ Nat Sci HCM, 227 Nguyen Van Cu Str,5 Distr, Ho Chi Minh City, Vietnam

[2] Inst Phys, CZ-18221 Prague, Czech Republic

来源：

APCTP-ASEAN WORKSHOP ON ADVANCED MATERIALS SCIENCE AND NANOTECHNOLOGY (AMSN08) | 2009年 / 187卷

关键词：

Plasma-enhanced chemical vapor deposition; hydrogen dilution; a-Si:H; nc/mu c-Si:H; para-crystallines; AMORPHOUS-SILICON; RAMAN;

D O I：

10.1088/1742-6596/187/1/012035

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Si:H thin films were deposited using PECVD method at substrate temperature of 250 degrees C with different hydrogen dilution. Structure investigations and hydrogen concentration estimation were performed using FTIR, Raman and UV-VIS spectroscopy. The IR and Raman spectra show various peak shifting when H dilution is changed. Band gaps of films were evaluated from the strong absorption regions in UV-VIS transmission spectra. The results demonstrate a transition from amorphous to nc/mu c structure when hydrogen dilution increased.

引用

页数：6

共 11 条

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