Vertical self-organization of Ge1-xMnx nanocolumn multilayers grown on Ge(001) substrates

被引:2
作者
Thi Giang Le [1 ]
Minh Than Dau [2 ]
机构
[1] Hong Duc Univ, 565 Quang Trung St, Thanh Hoa City, Vietnam
[2] CINaM Ctr Interdisciplinaire Nanosci Marseille, Campus Luminy,Case 913, F-13288 Marseille 9, France
来源
MODERN PHYSICS LETTERS B | 2016年 / 30卷 / 20期
关键词
Mutilayers; GeMn DMS; vertical self-organization; 2D model; NOBEL LECTURE; QUANTUM DOTS; ISLANDS; FERROMAGNETISM; MNXGE1-X;
D O I
10.1142/S0217984916502699
中图分类号
O59 [应用物理学];
学科分类号
摘要
High-resolution transmission electron microscopy (HR-TEM) has been used to investigate the structural properties of GeMn/Ge nanocolumns multilayer samples grown on Ge(001) substrates by means of molecular beam epitaxy (MBE) system. Four bilayers with the spacer thickness in the range between 6 nm and 15 nm and 10 periods of bilayers of Ge0.94Mn0.06/Ge nanocolumn are presented. A simplified 2D model based on the theory of elastic constant interactions has been used to provide reasonable explanations to the vertical self-organization of GeMn nanocolumns in multilayers.
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页数:7
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