Formation mechanism of defects in annealed InP

被引：0

作者：

Han, YJ ^{[1
]}

Liu, XL ^{[1
]}

Jiao, JH ^{[1
]}

Lin, LY ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

OPTOELECTRONIC MATERIALS AND DEVICES | 1998年 / 3419卷

关键词：

defects formation; hydrogen related defects; semi-insulating; InP;

D O I：

10.1117/12.311026

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Local vibrational modes in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimers, complexes of hydrogen with various impurities are investigated by FTIR. Hydrogen can acts as an actuator for generation of antistructure defects. Fully hydrogenated indium vacancy dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed.

引用

页码：346 / 353

页数：8

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