A temperature independent trimmable current source

被引:0
|
作者
Shah, S [1 ]
Collins, S [1 ]
机构
[1] Univ Oxford, Dept Engn Sci, Oxford OX1 3PJ, England
来源
2002 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL I, PROCEEDINGS | 2002年
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A non-volatile floating-gate MOSFET based trimmable current cell suitable for use in a current steering DAC and implemented in 0.35mum, 3.3V CMOS technology is presented. The current source can be programmed to an accuracy corresponding to 12-bit resolution using either hot electron injection to add charge to the floating-gate or hot hole injection to remove charge. The output current from the circuit can be adjusted by 40% to overcome the relatively large variations in output current which arise when a MOSFET is biased with a low gate overdrive voltage (Vgs-Vt). This allows the circuit to be designed around the temperature invariant region to give an output which is temperature independent over a large trimming range. This circuit could therefore be ideally suited to operate in the uncertain thermal environment created when a DAC is incorporated within a system on chip.
引用
收藏
页码:713 / 716
页数:4
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