Wafer bonding by Ni-induced crystallization of amorphous silicon

被引：4
|
作者：
Chao, CP [1 ]
Wu, YCS [1 ]
Lee, TL [1 ]
Wang, YH [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 9A期
关键词：
wafer bonding; amorphous silicon; metal-induced crystallization of amorphous silicon; nickel and electric field;
D O I：
10.1143/JJAP.42.5527
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Wafer bonding by Ni-induced crystallization of amorphous silicon was investigated. It was found that wafers can be bonded through the crystallization of amorphous silicon at temperatures below 550 degreesC. Moreover, when 250 V was applied across the stacked samples, the bonding temperatures could be decreased to as low as 350 degreesC.
引用
收藏
页码：5527 / 5530
页数：4
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