ON/OFF SWITCHABLE HIGH-Q CAPACITIVE-PIEZOELECTRIC ALN RESONATORS

被引：0
作者：
Schneider, Robert A. [1 ]
Nguyen, Clark T. -C. [1 ]
机构：
[1] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA
来源：
2014 IEEE 27TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS) | 2014年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Voltage-controlled on/off switching based on electrode collapse around a 301-MHz capacitive-piezoelectric AlN contour-mode disk resonator has been demonstrated while still allowing on-state Q's as high as 8,800-the highest yet demonstrated around 300MHz in sputtered AlN. The key to on/off switching of this device is the structure of its capacitive-piezoelectric transducer, which provides a suspended electrode atop the suspended AlN resonator that can be pulled electrostatically towards the substrate, pinning the combined resonator-electrode structure to the substrate, thereby opening new conduits for energy loss that suppress signal transmission. This on/off switchability obviates the signal path micromechanical switches needed by conventional attached-electrode AlN resonator counterparts. The Q approaching 9,000, together with the demonstrated on/off switchability and electromechanical coupling k(eff)(2) up to 0.78%, make this capacitive-piezoelectric resonator a strong contender among resonator technologies targeting RF channel-selecting communication front-ends.
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页码：1265 / 1268
页数：4
相关论文
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