Noise in the single electron transistor and controlled Josephson current in ballistic three terminal devices

被引：0

作者：

Starmark, B

Hürfeld, E

Henning, T

Delsing, P ^{[1
]}

Korotkov, AN

Shaikhaidarov, RS

Akazaki, T

Toyoda, E

Takayanagi, H

机构：

[1] Chalmers, Dept Microelect & Nanosci, S-41296 Gothenburg, Sweden

[2] Gothenburg Univ, S-41296 Gothenburg, Sweden

[3] Moscow MV Lomonosov State Univ, Inst Nucl Phys, Moscow 119899, Russia

[4] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 24301, Japan

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2001年 / 352卷 / 1-4期

关键词：

coulomb blockade; Andreev physics; single-electron transistor; noise; 2DEG; supercurrent;

D O I：

10.1016/S0921-4534(00)01701-9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two separate research topics are discussed. We discuss noise measurements of single electron transistors and the gain dependence of the noise. We will also describe the fabrication and preliminary measurements on several different superconductor/two-dimensional electron gas/superconductor structures. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：101 / 104

页数：4

共 5 条

[1] MESOSCOPIC SUPERCONDUCTOR SEMICONDUCTOR HETEROSTRUCTURES [J].