Photoemission spectroscopy at MOVPE-prepared InGaAs(100) surface reconstructions

被引：2

作者：

Seidel, U. ^{[1
]}

Doescher, H. ^{[1
]}

Lehmann, C. ^{[1
]}

Pettenkofer, C. ^{[1
]}

Hannappel, T. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, D-14109 Berlin, Germany

来源：

SURFACE SCIENCE | 2010年 / 604卷 / 21-22期

关键词：

Interfaces; Surface structure; Metalorganic vapor phase epitaxy; Semiconducting III-V materials; SCANNING-TUNNELING-MICROSCOPY; MULTIJUNCTION SOLAR-CELLS; ELECTRONIC-STRUCTURE; SEMICONDUCTORS; GAAS(001); JUNCTIONS; ALLOYS;

D O I：

10.1016/j.susc.2010.08.013

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Angular resolved ultraviolet photoemission spectroscopy at BESSY was employed to study the electronic structure of the three different, (4 x 3)-, (2 x 4)-, and (4 x 2)-surface reconstructions of In-0.53 Ga0.47As, which was grown lattice-matched to InP(100). The surfaces have been prepared using metal organic vapor phase epitaxy (MOVPE). For spectroscopy, a dedicated transfer system was employed and samples were transferred contamination-free from the MOVPE reactor to UHV-based analysis tools. For the different surface reconstructions, the Gamma-Delta-X direction was scanned while varying the photon energy between 10 eV and 28 eV. We observed two surface states in the photoelectron spectra on all of these surface reconstructions in addition to the bulk derived valence band emissions. Different binding energies of the surface states originating from different surface band bending were detected and described. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2012 / 2015

页数：4

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