High-energy x-ray reflectivity of buried interfaces created by wafer bonding

被引：43
作者：
Rieutord, F
Eymery, J
Fournel, F
Buttard, D
Oeser, R
Plantevin, O
Moriceau, H
Aspar, B
机构：
[1] CEA, Dept Rech Fondamentale Sur Mat Condensee, F-38054 Grenoble 9, France
[2] CEA, LETI, Dept Microtechnol, F-38054 Grenoble 9, France
来源：
PHYSICAL REVIEW B | 2001年 / 63卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.63.125408
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The bonding interfaces separating two silicon wafers assembled for making a silicon-on-insulator system are studied using high-resolution high-energy x-ray reflectivity. The evolution of the bond structure upon annealing is investigated, in situ. These data directly exhibit water removal and oxide layer structural changes, throughout the temperature sequence.
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页数：5
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