Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate

被引：69

作者：

Dussaigne, Amelie ^{[1
]}

Le Maitre, Patrick ^{[1
]}

Haas, Helge ^{[1
]}

Pillet, Jean-Christophe ^{[1
]}

Barbier, Frederic ^{[1
]}

Grenier, Adeline ^{[1
]}

Michit, Nicolas ^{[1
]}

Jannaud, Audrey ^{[1
]}

Templier, Roselyne ^{[1
]}

Vaufrey, David ^{[1
]}

Rol, Fabian ^{[1
]}

Ledoux, Olivier ^{[2
]}

Sotta, David ^{[2
]}

机构：

[1] Univ Grenoble Alpes, CEA, LETI, Minatec Campus, F-38054 Grenoble, France

[2] Soitec SA, F-38190 Bernin, France

来源：

APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 09期

关键词：

InGaN; red micro-LED; InGaN pseudo-substrate; full InGaN structure; InGaNOS;

D O I：

10.35848/1882-0786/ac1b3e

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The full InGaN structure was grown on two different InGaNOS substrates from Soitec. An electron blocking layer was inserted in the full InGaN light emitting diode (LED). Enhanced internal quantum efficiency of red emitting InGaN/InGaN quantum wells was measured with a value above 10% at 640 nm. 10 mu m diameter circular micro-LEDs are emitted at 625 nm with an external quantum efficiency of 0.14% at 8 A cm(-2) with an estimated light extraction efficiency below 4%. With a a lattice parameter of 3.210 angstrom, InGaN based red LED can also emit up to 650 nm.

引用

页数：5

共 17 条

[1] InGaN Platelets: Synthesis and Applications toward Green and Red Light-Emitting Diodes [J].

Bi, Zhaoxia ;

Lenrick, Filip ;

Colvin, Jovana ;

Gustafsson, Anders ;

Hultin, Olof ;

Nowzari, Ali ;

Lu, Taiping ;

Wallenberg, Reine ;

Timm, Rainer ;

Mikkelsen, Anders ;

Ohlsson, B. Jonas ;

Storm, Kristian ;

Monemar, Bo ;

Samuelson, Lars .

NANO LETTERS, 2019, 19 (05) :2832-2839

[2] Determination of the internal piezoelectric potentials and indium concentration in InGaN based quantum wells grown on relaxed InGaN pseudo-substrates by off-axis electron holography [J].

Cooper, D. ;

Boureau, V ;

Even, A. ;

Barbier, F. ;

Dussaigne, A. .

NANOTECHNOLOGY, 2020, 31 (47)

[3] Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter [J].

Daeubler, J. ;

Passow, T. ;

Aidam, R. ;

Koehler, K. ;

Kirste, L. ;

Kunzer, M. ;

Wagner, J. .

APPLIED PHYSICS LETTERS, 2014, 105 (11)

[4] Full InGaN red light emitting diodes [J].

Dussaigne, A. ;

Barbier, F. ;

Damilano, B. ;

Chenot, S. ;

Grenier, A. ;

Papon, A. M. ;

Samuel, B. ;

Ben Bakir, B. ;

Vaufrey, D. ;

Pillet, J. C. ;

Gasse, A. ;

Ledoux, O. ;

Rozhavskaya, M. ;

Sotta, D. .

JOURNAL OF APPLIED PHYSICS, 2020, 128 (13)

[5] Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate [J].

Even, A. ;

Laval, G. ;

Ledoux, O. ;

Ferret, P. ;

Sotta, D. ;

Guiot, E. ;

Levy, F. ;

Robin, I. C. ;

Dussaigne, A. .

APPLIED PHYSICS LETTERS, 2017, 110 (26)

[6] Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells [J].

Hestroffer, Karine ;

Wu, Feng ;

Li, Haoran ;

Lund, Cory ;

Keller, Stacia ;

Speck, James S. ;

Mishra, Umesh K. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (10)

[7] Development of InGaN-based red LED grown on (0001) polar surface [J].

Hwang, Jong-Ii ;

Hashimoto, Rei ;

Saito, Shinji ;

Nunoue, Shinya .

APPLIED PHYSICS EXPRESS, 2014, 7 (07)

[8] Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells [J].

Lymperakis, L. ;

Schulz, T. ;

Freysoldt, C. ;

Anikeeva, M. ;

Chen, Z. ;

Zheng, X. ;

Shen, B. ;

Cheze, C. ;

Siekacz, M. ;

Wang, X. Q. ;

Albrecht, M. ;

Neugebauer, J. .

PHYSICAL REVIEW MATERIALS, 2018, 2 (01)

[9] Efficiency Drop in Green InGaN/GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations [J].

Maur, Matthias Auf Der ;

Pecchia, Alessandro ;

Penazzi, Gabriele ;

Rodrigues, Walter ;

Di Carlo, Aldo .

PHYSICAL REVIEW LETTERS, 2016, 116 (02)

[10] Influence of size-reduction on the performances of GaN-based micro-LEDs for display application [J].

Olivier, Francois ;

Tirano, Sauveur ;

Dupre, Ludovic ;

Aventurier, Bernard ;

Largeron, Christophe ;

Templier, Francois .

JOURNAL OF LUMINESCENCE, 2017, 191 :112-116

← 1 2 →