FABRICATION AND CHARACTERISATION OF SCALN-BASED PIEZOELECTRIC MEMS CANTILEVERS

被引：0

作者：

Mayrhofer, P. M. ^{[1
]}

Wistrela, E. ^{[1
]}

Kucera, M. ^{[1
]}

Bittner, A. ^{[1
]}

Schmid, U. ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Sensor & Actuator Syst, A-1040 Vienna, Austria

来源：

2015 TRANSDUCERS - 2015 18TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS) | 2015年

关键词：

ScAlN thin films; piezoelectric; MEMS cantilever; impedance spectrum; Laser Doppler Vibrometer;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Scandium (Sc) doping of aluminium nitride (AlN) increases the piezoelectric actuation potential due to substantially enhanced piezoelectric constants. This work demonstrates the fabrication of MEMS cantilevers actuated by sputter deposited ScxAl1-xN thin films (x = 27 %) sandwiched between gold electrodes. Patterning of ScxAl1-xN films is performed by a reactive ion etching process using SiCl4. The dynamic actuation potential of the fabricated devices is evaluated with Laser Doppler Vibrometry and with electrical impedance spectroscopy measurements. When applying the Butterworth Van-Dyke equivalent circuit a significant increase of the effective transverse piezoelectric constant d(31) is demonstrated.

引用

页码：2144 / 2147

页数：4

共 10 条

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