Characterization of CF4 plasma-treated indium-tin-oxide surfaces used in organic light-emitting diodes by X-ray photoemission spectroscopy

被引：6
作者：
Jo, Sung Jin
Kim, Chang Su
Ryu, Seung Yoon
Kim, Jong Bok
Noh, Joo Hyon
Lee, Se-Jong
Baik, Hong Koo [1 ]
机构：
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[2] Kyungsung Univ, Dept Mat Sci & Engn, Pusan 608736, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 10A期
关键词：
organic light-emitting diodes; plasma treatment; X-ray photoemission spectroscopy; chemical composition; fluorine;
D O I：
10.1143/JJAP.46.6814
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The CF4 plasma treatment of indium-tin-oxide (ITO) greatly improves the performance of organic light-emitting diodes (OLEDs). The effects of plasma treatment on the chemical composition change and device performance were investigated by X-ray photoemission spectroscopy (XPS). The present results suggest that fluorine directly bonded to indium or tin on the ITO surface and markedly enhanced device performance.
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收藏
页码：6814 / 6816
页数：3
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