Gain spectral characteristics of GaInAsP/InP quantum-wire lasers

被引：1

作者：

Nakaya, H ^{[1
]}

Kojima, T ^{[1
]}

Tanaka, S ^{[1
]}

Yasumoto, H ^{[1
]}

Tamura, S ^{[1
]}

Arai, S ^{[1
]}

机构：

[1] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712691

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gain spectra of 1.5 mu m wavelength GaInAsP/InP compressively-strained quantum-wire lasers with a wire width of 20nm and 25nm were measured and compared with that of quantum-film lasers fabricated on a same wafer. As a result, the difference of the spectral shape between the quantum-wire and the quantum-film lasers were clearly obtained at T=100K.

引用

页码：591 / 594

页数：4