Radiation damage, trapping and release of deuterium in diamond and HOPG-graphite

We report the research done on the radiation damage production in HOPG-graphite and diamond due to the implantation of deuterium ions and its relation to the trapping and release of deuterium in these materials. The radiation damage was estimated using Rutherford backscattering spectrometry in channelling geometry (RBS-c), while trapping and release processes were followed using the D(He-3,p)alpha nuclear reaction. The measured radiation damage is larger than TRIM.SP predictions in both materials. Deuterium-induced damage at low fluences shows similar annealing behaviour in HOPG and in diamond. Implanted deuterium shows similar trapping behaviour in HOPG and diamond, while the thermal release shows two regimes: at high fluences the release behaviour is similar in both materials, at low fluences only little deuterium is released from diamond up to 1100 K. (C) 2001 Elsevier Science B.V. All rights reserved.