Demonstration of a 320x256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors

被引:129
作者
Krishna, S
Forman, D
Annamalai, S
Dowd, P
Varangis, P
Tumolillo, T
Gray, A
Zilko, J
Sun, K
Liu, MG
Campbell, J
Carothers, D
机构
[1] Univ New Mexico, Ctr High Technol Mat, ECE Dept, Albuquerque, NM 87106 USA
[2] Zia Laser Inc, Albuquerque, NM 87106 USA
[3] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA
[4] BAE Syst, Austin, NH 03061 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1924887
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the demonstration of a two-color infrared focal plane array based on a voltage-tunable quantum dots-in-well (DWELL) design. The active region consists of multiple layers of InAs quantum dots in an In0.15Ga0.85As quantum well. Spectral response measurements yielded a peak at 5.5 mu m for lower biases and at 8-10 mu m for higher biases. Using calibrated blackbody measurements, the midwavelength and long wavelength specific detectivity (D*) were estimated to be 7.1 x 10(10) cm Hz(1/2)/ W(V-b= 1.0 V) and 2.6 x 10(10) cm Hz(1/2)/ WsVb= 2.6 V) at 78 K, respectively. This material was processed into a 320 x 256 array and integrated with an Indigo 9705 readout chip and thermal imaging was achieved at 80 K. (c) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
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