110 GHz Characterization of Coplanar Waveguides on GaN-on-Si Substrates

被引：19

作者：

Marti, Diego ^{[1
]}

Vetter, Mathias ^{[1
]}

Alt, Andreas R. ^{[1
]}

Benedickter, Hansruedi ^{[1
]}

Bolognesi, C. R. ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Millimeter Wave Elect Grp, CH-8092 Zurich, Switzerland

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 12期

关键词：

CONDUCTOR-BACKED CPW; GATE ALGAN/GAN HEMTS; FINITE GROUND WIDTH; RADIATION CHARACTERISTICS; SILICON; PERFORMANCE; DISPERSION;

D O I：

10.1143/APEX.3.124101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We characterize the microwave loss in coplanar waveguides (CPWs) on AlGaN/GaN high-electron mobility transistor (HEMT) buffer layers on high-resistivity silicon (HR-Si) substrates, up to 110 GHz. To our knowledge, this is the first broadband characterization of CPWs on GaN-on-Si. Conventional CPWs on commercially available AlGaN/GaN on HR-Si HEMT layers show a loss as low as 0.8 dB/mm at 110 GHz. Losses are further reduced by etching trenches between the CPW conductors, reaching 0.47 dB/mm at 110 GHz. The work shows that CPWs on GaN-on-Si exhibit performances comparable to those built on semi-insulating InP, demonstrating the suitability of GaN-on-Si technology in millimeter-wave applications. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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