110 GHz Characterization of Coplanar Waveguides on GaN-on-Si Substrates

被引：19

作者：

Marti, Diego ^{[1
]}

Vetter, Mathias ^{[1
]}

Alt, Andreas R. ^{[1
]}

Benedickter, Hansruedi ^{[1
]}

Bolognesi, C. R. ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Millimeter Wave Elect Grp, CH-8092 Zurich, Switzerland

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 12期

关键词：

CONDUCTOR-BACKED CPW; GATE ALGAN/GAN HEMTS; FINITE GROUND WIDTH; RADIATION CHARACTERISTICS; SILICON; PERFORMANCE; DISPERSION;

D O I：

10.1143/APEX.3.124101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We characterize the microwave loss in coplanar waveguides (CPWs) on AlGaN/GaN high-electron mobility transistor (HEMT) buffer layers on high-resistivity silicon (HR-Si) substrates, up to 110 GHz. To our knowledge, this is the first broadband characterization of CPWs on GaN-on-Si. Conventional CPWs on commercially available AlGaN/GaN on HR-Si HEMT layers show a loss as low as 0.8 dB/mm at 110 GHz. Losses are further reduced by etching trenches between the CPW conductors, reaching 0.47 dB/mm at 110 GHz. The work shows that CPWs on GaN-on-Si exhibit performances comparable to those built on semi-insulating InP, demonstrating the suitability of GaN-on-Si technology in millimeter-wave applications. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[1] Low-Loss Coplanar Waveguides on GaN-on-Si Substrates
Cao, Lina
Lo, Chien-Fong
Marchand, Hugues
Johnson, Wayne
Fay, Patrick
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2018, 28 (10) : 861 - 863
[2] Coplanar Waveguide Performance Comparison of GaN-on-Si and GaN-on-SiC Substrates
Cao, Lina
Lo, Chien-Fong
Marchand, Hugues
Johnson, Wayne
Fay, Patrick
2017 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), 2017,
[3] Time Dependence of RF Losses in GaN-on-Si Substrates
Cardinael, Pieter
Yadav, Sachin
Zhao, Ming
Rack, Martin
Lederer, Dimitri
Collaert, Nadine
Parvais, Bertrand
Raskin, Jean-Pierre
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2022, 32 (06) : 688 - 691
[4] Low loss GaN waveguides for visible light on Si substrates
Gromovyi, M.
Semond, F.
Duboz, J. Y.
Feuillet, G.
De Micheli, M. P.
JOURNAL OF THE EUROPEAN OPTICAL SOCIETY-RAPID PUBLICATIONS, 2014, 9
[5] Vertical LEDs on Rigid and Flexible Substrates Using GaN-on-Si Epilayers and Au-Free Bonding
Zou, Xinbo
Zhang, Xu
Chong, Wing Cheung
Tang, Chak Wah
Lau, Kei May
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (04) : 1587 - 1593
[6] Progress and Challenges in GaN-on-Si LEDs
Fenwick, William
LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XX, 2016, 9768
[7] Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates
Cardinael, Pieter
Yadav, Sachin
Parvais, Bertrand
Raskin, Jean-Pierre
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2024, 12 : 322 - 330
[8] A review on the GaN-on-Si power electronic devices
Zhong, Yaozong
Zhang, Jinwei
Wu, Shan
Jia, Lifang
Yang, Xuelin
Liu, Yang
Zhang, Yun
Sun, Qian
FUNDAMENTAL RESEARCH, 2022, 2 (03): : 462 - 475
[9] Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology
Chandrasekar, Hareesh
Uren, Michael J.
Casbon, Michael A.
Hirshy, Hassan
Eblabla, Abdalla
Elgaid, Khaled
Pomeroy, James W.
Tasker, Paul J.
Kuball, Martin
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (04) : 1681 - 1687
[10] Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency fT of 310GHz
Xie, Hanlin
Liu, Zhihong
Gao, Yu
Ranjan, Kumud
Lee, Kenneth E.
Ng, Geok Ing
APPLIED PHYSICS EXPRESS, 2019, 12 (12)

← 1 2 3 4 5 →