0.5-1-V, 90-400-mA, Modular, Distributed, 3 x 3 Digital LDOs Based on Event-Driven Control and Domino Sampling and Regulation

被引:14
作者
Kim, Sung Justin [1 ]
Kim, Dongkwun [1 ]
Pu, Yu [2 ,3 ]
Shi, Chunlei [2 ,4 ]
Chang, Soo Bong [1 ,5 ]
Seok, Mingoo [1 ]
机构
[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
[2] Qualcomm, San Diego, CA 92121 USA
[3] Alibaba DAMO Comp Res Lab, Sunnyvale, CA 94085 USA
[4] Spreadtrum Commun USA, San Diego, CA 92121 USA
[5] Samsung Elect, Hwaseong Si 18448, South Korea
基金
美国国家科学基金会;
关键词
Distributed event-driven (ED) controls; domino sampling and regulation; multiple digital low-dropout voltage regulator (LDO) system; power grid resistance; system-on-chip (SoC); LOW-DROPOUT REGULATOR; STABILITY;
D O I
10.1109/JSSC.2021.3069954
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article presents on-chip power delivery hardware comprised of nine event-driven (ED) digital low-dropout voltage regulators (LDOs) for a large digital load. The goal is to address the performance degradations in an LDO's accuracy and dynamic load regulation in the presence of parasitics in the power grid of a load. In particular, we investigate the effects of power grid resistance (R-G), which becomes worse with the size of a digital load and technology scaling. Two critical problems that we address are: 1) the IR drop and 2) the dynamic voltage droop problems. Employing multiple LDOs across the power grid improves the IR drop for mainly better voltage sensing. To tackle the voltage droop problem, we distribute LDOs with ED control such that the LDO closest to a localized droop can instantly correct it. To further improve the feedback control latency, we also enhance each LDO with a novel domino sampling and regulation technique. We prototype the on-chip power delivery system consisting of 3 x 3 digital LDOs in a 65-nm CMOS. We also devise the framework to analyze the stability of the multi-LDO system across R-G values. Measurements show that at 0.5-V (1 V) input, the single LDO exhibits 49.8-mV (94.1 mV) voltage droop for a load current change of 4.04 mA/0.1 ns (13.8 mA/0.2 ns) with a 0.1-nF integrated output capacitor. Also, the nine-LDO system achieves a current density of 248.8 mA/mm(2) (1.118.6 A/mm(2)) at 0.5-V (1 V) input voltage.
引用
收藏
页码:2781 / 2794
页数:14
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