The effect of annealing temperature on the physical properties of Cu2O thin film deposited by SILAR method

被引：22
|
作者：
Ozaslan, D. [1 ]
Erken, O. [2 ]
Gunes, M. [3 ]
Gumus, C. [1 ]
机构：
[1] Univ Cukurova, Phys Dept, TR-01330 Adana, Turkey
[2] Adiyaman Univ, Fac Sci & Letters, Dept Phys, TR-02040 Adiyaman, Turkey
[3] Adana Alparslan Turkes Sci & Technol Univ, Fac Engn, Dept Mat Engn, TR-01250 Adana, Turkey
来源：
PHYSICA B-CONDENSED MATTER | 2020年 / 580卷
关键词：
Cu2O; Annealing; CuO; SILAR; XRD; FE-SEM; SOLAR-CELL; CUO; LAYER; MORPHOLOGY; DENSITY;
D O I：
10.1016/j.physb.2019.411922
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Cu2O film was deposited on a glass substrate at 70 degrees C by the SILAR (Successive Ionic Layer Adsorption and Reaction) method. The Cu2O film was annealed in an air atmosphere at 100 degrees C, 300 degrees C, and 500 degrees C temperatures for 1 h and the effect of the annealing temperature on the physical properties was investigated. The phase-transition temperature that corresponds to the transformation from Cu2O to CuO was occurred at temperature of approximately 300 degrees C with annealing process. The energy band gap (E-g) was reduced from 2.57 eV to 1.91 eV with the increasing annealing temperature. Hall measurement revealed that the film showed p-type conductivity and the resistivity (rho) of Cu2O deposited at 70 degrees C and annealed 100 degrees C were calculated as 6.12 x 10(4) and 7.44 x 10(3 )Omega cm, respectively, while the film annealed at 300 degrees C and 500 degrees C the resistivity of CuO was found to be 8.23 x 10(3) and 5.11 x 10(2) Omega em, respectively.
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页数：8
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