Optoelectronic Memory Using Two-Dimensional Materials

被引：178

作者：

Lei, Sidong ^{[1
]}

Wen, Fangfang ^{[2
]}

Li, Bo ^{[1
]}

Wang, Qizhong ^{[1
]}

Huang, Yihan ^{[3
]}

Gong, Yongji ^{[2
]}

He, Yongmin ^{[1
,4
]}

Dong, Pei ^{[1
]}

Bellah, James ^{[1
]}

George, Antony ^{[1
]}

Ge, Liehui ^{[1
]}

Lou, Jun ^{[1
]}

Halas, Naomi J. ^{[2
,3
,5
]}

Vajtai, Robert ^{[1
]}

Ajayan, Pulickel M. ^{[1
]}

机构：

[1] Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA

[2] Rice Univ, Dept Chem, Houston, TX 77005 USA

[3] Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA

[4] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China

[5] Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA

来源：

NANO LETTERS | 2015年 / 15卷 / 01期

关键词：

2D image sensor; 2D optoelectronic memory; Cu-In-Se; InSe; MoS2; trapping states; HIGH-PERFORMANCE; BORON-NITRIDE; MOS2; PHOTODETECTORS; NANOSHEETS; TRANSISTORS; PHOTORESPONSE;

D O I：

10.1021/nl503505f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An atomically thin optoelectronic memory array for image sensing is demonstrated with layered CuIn7Se11 and extended to InSe and MoS2 atomic layers. Photogenerated charge carriers are trapped and subsequently retrieved from the potential well formed by gating a 2D material with Schottky barriers. The atomically thin layered optoelectronic memory can accumulate photon-generated charges during light exposure, and the charges can be read out later for data processing and permanent storage. An array of atomically thin image memory pixels was built to illustrate the potential of fabricating large-scale 2D material-based image sensors for image capture and storage. © 2014 American Chemical Society.

引用

页码：259 / 265

页数：7

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