Activation energy for the formation of oxygen vacancies in undoped nonstoichiometric indium oxide films

被引：4

作者：

Orlov, AM ^{[1
]}

Kostishko, BM ^{[1
]}

Gonchar, LI ^{[1
]}

机构：

[1] Ulyanovsk State Univ, Ulyanovsk, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1998年 / 24卷 / 02期

关键词：

D O I：

10.1134/1.1262004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An analysis is made of the temperature dependence of the electrical conductivity of undoped nonstoichiometric indium oxide films. Activation energies are obtained for the formation of oxygen vacancies and for the mobility of quasifree carriers. (C) 1998 American Institute of Physics. [S1063-7850(98)00102-5].

引用

页码：81 / 82

页数：2

共 8 条

[1] TEMPERATURE-DEPENDENCE OF THE RESISTIVITY OF AMORPHOUS INDIUM OXIDE [J].