Lifetime and migration length of B-related admolecules on diamond {100}-surface: Comparative study of hot-filament and microwave plasma-enhanced chemical vapor deposition

被引：8

作者：

Ohmagari, Shinya ^{[1
]}

Ogura, Masahiko ^{[2
]}

Umezawa, Hitoshi ^{[1
]}

Mokuno, Yoshiaki ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Diamond Mat Team, 1-8-31 Midorigaoka, Ikeda, Osaka 5638577, Japan

[2] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Diamond Device Team, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2017年 / 479卷

关键词：

Diamond; Chemical vapor deposition processes; Doping; Etching; Growth models; Semiconducting materials; BORON-DOPED DIAMOND; HOMOEPITAXIAL GROWTH; FILMS; CVD; SURFACE; TEMPERATURE; ELECTRONICS; SUBSTRATE; NITROGEN;

D O I：

10.1016/j.jcrysgro.2017.09.022

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of heavily B-doped low-resistivity diamond films will facilitate the development of novel semiconductor applications. To discuss the key factors that increase B solubility into single-crystal {1 0 0} diamond, the misorientation-angle (theta(mis)) dependences of B incorporation were compared between hot filament (HF) and microwave plasma (MW)-enhanced chemical vapor deposition. Based on the model that considers the step-flow motion, the lifetime of B-related admolecules (tau) on terrace surface was evaluated. We found that tau can be extended more than similar to 13 times by utilizing HF growth. As a result, the longer migration length of B-related admolecules (chi(B)) was evidenced. Conversely, shorter tau and chi(B) were revealed for MW growth which limit the B incorporation (probably due to etching). This study will provide an important insight to increase the B solubility. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：52 / 58

页数：7

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