Size- and temperature-independent zero-offset current-voltage characteristics of GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors

被引：4
|
作者：
Mochizuki, K [1 ]
Oka, T [1 ]
Ohbu, I [1 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 04期
关键词：
Current voltage characteristics - Electron tunneling - Microwave amplifiers - Power amplifiers - Semiconducting gallium arsenide - Semiconducting indium phosphide - Thermal effects;
D O I：
10.1049/el:20010154
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The collector-emitter offset voltage of GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors (C-up TC-HBTs) was found to be almost zero (10-14mV) and independent of transistor size and temperature. These findings indicate that GaInP/GaAs C-up TC-HBTs are strong candidates for high-efficiency high-power amplifiers.
引用
收藏
页码：252 / 253
页数：2
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