White-light Emission of In-doped ZnO Nanoparticles Prepared by Sol-Gel Method

被引:0
|
作者
Zhang Zhong [1 ]
Li Shishuai [1 ]
Huang Jinzhao [1 ]
Liu Chunyan [1 ]
Feng Xiupeng [1 ]
Li Shanliang
Tao Yewei
机构
[1] Univ Jinan, Shool Sci, Jinan 250022, Peoples R China
关键词
Sol-Gel Method; In-doped ZnO; X-ray diffraction; Resistivity; Photoluminescence; White-light emission;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ZnO nanoparticles doped with 5%, 8%, 10% and 15% Indium are prepared by Sol-Gel method. The X-ray diffraction (XRD), the electronic resistivity and the photoluminescence spectrum are applied to investigate the optical and electric properties of ZnO:In. The result indicated that the samples are wurtzite in structure and show sharp diffraction peak of ZnO at (101); The average size of the sample is approximately 45nm. The size and the electronic resistivity decrease with increasing the doping ratio. ZnO: In represent three emission peak(465 nm, 535 nm, 630nm) excited by 365 nm wavelength. When the Indium-doping percent is 10%, which is the best value in the experiment the sample presents strong 465nm, 530nm and 630nm light-emitting, which results in the white light. The reasons of the above-mentioned phenomena are deeply discussed.
引用
收藏
页码:325 / 327
页数:3
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