Ohmic contacts of Pd/Zn/M(= Pd or Pt)/Au to p-type InP

被引：0
作者：
Hwang, S [1 ]
Shim, J [1 ]
Yungseon, E [1 ]
机构：
[1] Hanyang Univ, Dept Elect & Comp Engn, Ansan 425791, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2005年 / 46卷 / 04期
关键词：
ohmic contact; p-InP; Au/Pt/Zn/Pd/p-InP; Au/Cr/AuZn/Au/p-InP;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have investigated the ohmic properties of Au/M(= Pd or Pt)/Zn/Pd/p-InP, focusing on the role of the third metal M in Au-free metallization. Both the lowest specific contact resistivity of 7 x 10(-6) Omega(.)cm(2) and a flat diffusion front were obtained for a sample with a Au/Pt/Zn/Pd/p-InP contact material after annealing at 400 degrees C for 4 min, indicating that the Pt layer was more effective than the Pd layer in preventing Zn out-diffusion during the annealing process. In addition to Au-free metallizations, we fabricated the Au-based metallization of Au/Cr/AuZn/Au/p-lnP in order to justify our ohmic contact process, and we compared its ohmic characteristics.
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页码：L751 / L755
页数：5
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