Density of States and Zero Landau Level Probed through Capacitance of Graphene

被引：171

作者：

Ponomarenko, L. A. ^{[1
]}

Yang, R. ^{[1
]}

Gorbachev, R. V. ^{[1
]}

Blake, P. ^{[1
]}

Mayorov, A. S. ^{[1
]}

Novoselov, K. S. ^{[1
]}

Katsnelson, M. I. ^{[2
]}

Geim, A. K. ^{[1
]}

机构：

[1] Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

[2] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 13期

基金：

英国工程与自然科学研究理事会;

关键词：

QUANTUM CAPACITANCE; ELECTRONIC-PROPERTIES; TRANSISTOR; TRANSPORT; DEVICES; GAS;

D O I：

10.1103/PhysRevLett.105.136801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report capacitors in which a finite electronic compressibility of graphene dominates the electrostatics, resulting in pronounced changes in capacitance as a function of magnetic field and carrier concentration. The capacitance measurements have allowed us to accurately map the density of states D, and compare it against theoretical predictions. Landau oscillations in D are robust and zero Landau level (LL) can easily be seen at room temperature in moderate fields. The broadening of LLs is strongly affected by charge inhomogeneity that leads to zero LL being broader than other levels.

引用

页数：4

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