Effect of the band structure on the thermoelectric properties of a semiconductor

被引：13

作者：

Pshenai-Severin, D. A. ^{[1
]}

Fedorov, M. I. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

PHYSICS OF THE SOLID STATE | 2007年 / 49卷 / 09期

关键词：

72.15.Jf; 72.20.Pa;

D O I：

10.1134/S1063783407090053

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The dependence of the thermoelectric parameters of a material on the band position and carrier effective masses is studied theoretically. The optimum parameters providing an increase in the thermoelectric figure-of-merit are specified. The results obtained are applied to the n-type Mg2Si-Mg2Sn solid solutions, in which the complex structure of the conduction band is one of the factors responsible for an increase in the thermoelectric efficiency.

引用

页码：1633 / 1637

页数：5

共 9 条

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