Simulated calculation of temperature rise in silicon material irradiated by high power laser

被引：1
|
作者：
Shen, ZH [1 ]
Lu, JA [1 ]
Ni, XW [1 ]
机构：
[1] NANJING UNIV SCI & TECHNOL,DEPT APPL PHYS,NANJING 210094,PEOPLES R CHINA
来源：
LASER PROCESSING OF MATERIALS AND INDUSTRIAL APPLICATIONS | 1996年 / 2888卷
关键词：
laser-semiconductor interaction; silicon; temperature rise;
D O I：
10.1117/12.253130
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：271 / 275
页数：5
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