High resistivity InSb crystal growth using the vertical bridgman method for fabrication of schottky diodes

被引：4
作者：
Hishiki, Shigeomi
Kogetsu, Yoshitaka
Kanno, Ikuo
Yamana, Hajimu
机构：
[1] Kyoto Univ, Grad Sch Engn, Kyoto 6068501, Japan
[2] Kyoto Univ, Inst Res Reactor, Osaka 5900494, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 8A期
关键词：
compound semiconductor; InSb; crystal growth; diode; radiation detector; resistivity;
D O I：
10.1143/JJAP.46.5030
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Compound semiconductor InSb crystals were grown using raw materials with different purities, for application as radiation detector substrates. The electrical properties of the grown crystals were compared with those of commercial InSb wafers. The resistivity of the grown crystals prepared from 99.9999% purity raw materials showed a higher value than those of commercial crystals.
引用
收藏
页码：5030 / 5032
页数：3
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