Growth of skyrmionic MnSi nanowires on Si: Critical importance of the SiO2 layer

被引:10
作者
Tang, Siwei [1 ,2 ]
Kravchenko, Ivan [2 ]
Yi, Jieyu [1 ,2 ]
Cao, Guixin [2 ]
Howe, Jane [3 ]
Mandrus, David [1 ]
Gai, Zheng [2 ]
机构
[1] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA
[2] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
[3] Hitachi High Technol Inc, Rexdale, ON M9W 6A4, Canada
关键词
skyrmion; spintronics; oxide-assisted growth; nanowires; magnetic materials; REAL-SPACE OBSERVATION; WEAK FERROMAGNETISM; THERMAL EVAPORATION; HELIMAGNET MNSI; CHIRAL MAGNET; SILICON; TEMPERATURE; INTERFACE; CRYSTAL; NANOSTRUCTURES;
D O I
10.1007/s12274-014-0538-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
MnSi in the B20 structure is a prototypical helimagnet that forms a skyrmion lattice, a vortex-like spin texture under applied magnetic field. We have systematically explored the synthesis of single crystal MnSi nanowires via controlled oxide-assisted chemical vapor deposition and observed a characteristic signature of skyrmion magnetic ordering in the MnSi nanowires. The thickness of the SiO2 layer on the Si substrate plays the key role in obtaining a high yield of B20 MnSi skyrmion nanowires. A growth mechanism was proposed that is consistent with the existence of an optimum SiO2 thickness. A growth phase diagram was constructed based on the extensive studies of various growth conditions for various MnSi nanostructures. The persistence of both the helicoidal and skyrmion magnetic ordering in the one-dimensional wires was directly revealed by ac and dc magnetic measurements.
引用
收藏
页码:1788 / 1796
页数:9
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