Measurement of the temperature-dependent recombination lifetimes in photovoltaic materials

被引:0
作者
Johnston, SW [1 ]
Ahrenkiel, RK [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源
NCPV PHOTOVOLTAICS PROGRAM REVIEW: PROCEEDINGS OF THE 15TH CONFERENCE | 1999年 / 462卷
关键词
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Lifetime spectroscopy is a valuable tool for the characterization of photovoltaic materials. Measured lifetime values are inherently dependent on the defect and impurity densities present in the material. Injection-level and temperature dependencies of the recombination rate further characterize the material and possibly provide information for the identification of specific impurities. Also, trapping levels may be determined by observing their temperature-dependent thermal emission. Measured examples include surface-passivated, float-zone silicon and high-quality, undoped GaAs. Excess-carrier-decay curves are recorded from 80 to 300 K using a lifetime-measurement technique called ultrahigh frequency photoconductive decay.
引用
收藏
页码:505 / 510
页数:6
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