Investigation of photoconductivity of individual InAs/GaAs(001) quantum dots by Scanning Near-field Optical Microscopy

被引：0
|
作者：
Filatov, D. O. [1 ]
Kazantseva, I. A. [2 ]
Baidus, N. V. [3 ]
Gorshkov, A. P. [1 ,3 ]
Mishkin, V. P. [4 ]
机构：
[1] Lobachevskii State Univ Nizhnii Novgorod, Res & Educ Ctr Phys Solid State Nanostruct, Nizhnii Novgorod 603950, Russia
[2] Lobachevskii State Univ Nizhnii Novgorod, Dept Phys, Nizhnii Novgorod 603950, Russia
[3] Lobachevskii State Univ Nizhnii Novgorod, Res Inst Phys & Technol, Nizhnii Novgorod 603950, Russia
[4] Ogarev Mordovia State Univ, Inst Phys & Chem, Saransk 430005, Mordovia Republ, Russia
来源：
SCANNING PROBE MICROSCOPY 2017 (SPM-2017) | 2017年 / 256卷
关键词：
PHOTOCURRENT;
D O I：
10.1088/1757-899X/256/1/012005
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The spatial distribution of the photocurrent in the input window plane of a GaAs-based p-i-n photodiode with embedded self-assembled InAs quantum dots (QDs) has been studied with the photoexcitation through a Scanning Near-field Optical Microscope (SNOM) probe at the emission wavelength greater than the intrinsic absorption edge of the host material (GaAs). The inhomogeneities related to the interband absorption in the individual InAs/GaAs(001) QDs have been observed in the photocurrent SNOM images. Thus, the possibility of imaging the individual InAs/GaAs(001) QDs in the photocurrent SNOM images with the lateral spatial resolution similar to 100 nm (of the same order of magnitude as the SNOM probe aperture size) has been demonstrated.
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页数：6
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