Formation of Periodic Nanoripples on Silicon and Germanium Induced by Femtosecond Laser Pulses

被引：36

作者：

Le Harzic, R. ^{[1
]}

Dorr, D. ^{[1
]}

Sauer, D. ^{[1
]}

Neumeier, M. ^{[2
]}

Epple, M. ^{[2
]}

Zimmermann, H. ^{[1
]}

Stracke, F. ^{[1
]}

机构：

[1] Fraunhofer Inst Biomed Engn IBMT, Ensheimer Str 48, D-66386 St Ingbert, Germany

[2] Univ Duisburg Essen, Nanointegrat Duisburg Essen CeNIDE, Inst Inorgan Chem & Ctr, D-45117 Essen, Germany

来源：

LASERS IN MANUFACTURING 2011: PROCEEDINGS OF THE SIXTH INTERNATIONAL WLT CONFERENCE ON LASERS IN MANUFACTURING, VOL 12, PT B | 2011年 / 12卷

基金：

美国国家科学基金会;

关键词：

Ripples; HSFL; femtosecond laser; silicon; germanium; SUBWAVELENGTH RIPPLE FORMATION; SURFACE; NANOSECOND;

D O I：

10.1016/j.phpro.2011.03.102

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on the generation of high spatial frequency LIPSS (HSFL) in silicon and germanium induced by nanojoule femtosecond laser pulses at high repetition rate in air. The periodicity of the ripples is found to be of 125 nm for silicon and of 98 nm for germanium. The formation of these HSFL in silicon and germanium seems to be induced by second harmonic generation (SHG) and the periods agree quite well with lambda/2n-law. Reproducible and accurate patterning of uniform HSFL on surface areas up to 100 mm(2) can be performed using a versatile laser processing workstation.

引用

页码：29 / 36

页数：8

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